Imec has built very small transistors using MoS2 as a channel material and reports that they’re the best performing devices of its kind to date. There’s still some way to go before MoS2 beats silicon devices, but Imec’s work is a good start to creating ultra-scaled CMOS.
A switch to 2D materials such as MoS2 is thought to be necessary to maintain CMOS scaling because so-called short-channel effects start to limit silicon device performance at certain scales. After academic studies confirmed the potential of several 2D materials, Imec started studying the devices in more detail and – more importantly – started identifying ways to optimize their performance.
“Although still an order of magnitude away from Si transistors, we’ve brought our MOSFET devices into a realm where they show promising performance for future logic and memory applications,” says Iuliana Radu, Director of Exploratory and Quantum Computing at Imec. “To bridge this order of magnitude, we’ve identified a path of systematic improvements such as a further reduction of the gate oxide thickness, the implementation of a double-gated architecture and further reduction of channel and interface defects.”